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Monte Carlo calculation of hole initiated impact ionization in 4H phase SiC
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
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2000 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 87, no 8, 3864-3871 p.Article in journal (Refereed) Published
Abstract [en]

In this article, we present a comprehensive, full band theoretical study of the high field, hole transport properties of the 4H phase of silicon carbide (4H-SiC). The calculations are performed using a full band ensemble Monte Carlo simulation that includes numerically tabulated impact ionization rates, and phonon and ionized impurity scattering rates. In addition, the simulation includes a mechanism, interband tunneling, by which the holes can move between bands in the proximity of band intersection points, It is found that there exists a significant anisotropy in the calculated steady-state hole drift velocity for fields applied parallel and perpendicular to the c-axis direction. Good agreement with experimental measurements of the hole initiated impact ionization coefficient for fields applied along the c axis is obtained, provided that interband tunneling in the proximity of band intersections is included in the model. If interband tunneling is not included, the calculated ionization coefficients are orders of magnitude lower than the experimental measurements. © 2000 American Institute of Physics.

Place, publisher, year, edition, pages
2000. Vol. 87, no 8, 3864-3871 p.
Keyword [en]
Impact ionization, 4H-SiC
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1988DOI: 10.1063/1.372426ISI: 000086169500038Scopus ID: 2-s2.0-0001273715Local ID: 867OAI: oai:DiVA.org:miun-1988DiVA: diva2:27020
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2016-10-08Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
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