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Numerical modelling of the floating body enhanced breakdown in ultra small non-fully depleted SOI MOSFETs
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
1999 (English)In: Physica scripta. T, ISSN 0281-1847, Vol. T79, 311-313 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1999. Vol. T79, 311-313 p.
Keyword [en]
SOI MOSFET, Simulation
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1986DOI: 10.1238/Physica.Topical.079a00311ISI: 000079877800075Local ID: 865OAI: oai:DiVA.org:miun-1986DiVA: diva2:27018
Available from: 2008-12-11 Created: 2008-12-11 Last updated: 2016-10-05Bibliographically approved

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Dubaric, ErvinNilsson, Hans-ErikPetersson, Sture
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CiteExportLink to record
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