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Process Optimisation and Characterisation of PBT structures
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-8325-5177
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
1994 (English)In: Physica scripta. T, ISSN 0281-1847, Vol. T54, 226-229 p.Article in journal (Refereed) Published
Abstract [en]

The Permeable Base Transistor (PBT) is considered to be a high frequency device with simulated fT and fmax values in the order of 100 GHz. In this work we present several PBT devices in silicon. The fabrication process steps have been developed and optimised in order to meet the demands of a future integration in a standard CMOS processing. Cobalt disilicide is used for the emitter metallization and base metallisation in order to form a good Schottky contact. The important issues of a fabrication process reliability and controllability are discussed in this paper. The process steps had been analysed by standard analysis methods. Electrical (DC) characterisation of the devices has been performed. The obtained results are in a good agreement with the 2D simulations.

Place, publisher, year, edition, pages
1994. Vol. T54, 226-229 p.
Keyword [en]
Processing, PBT, Silicon
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1979DOI: 10.1088/0031-8949/1994/T54/055ISI: A1994PW67200056Local ID: 859OAI: oai:DiVA.org:miun-1979DiVA: diva2:27011
Available from: 2008-12-11 Created: 2008-12-11 Last updated: 2016-10-05Bibliographically approved

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Nilsson, Hans-ErikFröjdh, ChristerPetersson, Sture
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