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Different methods of noise reduction in Monte Carlo simulations of a Schottky diode
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Responsible organisation
1994 (English)In: Physica scripta. T, ISSN 0281-1847, Vol. T54, 268-272 p.Article in journal (Refereed) Published
Abstract [en]

Methods of decreasing the noise and increasing the computational efficiency in Monte Carlo simulations of semiconductor devices are investigated. A lookup table approach to the charge assignment to mesh points has been implemented which is independent of the complexity of the assignment function. Using this approach reduces the CPU time of the charge assignment to about one third. Potential fluctuations in low field regions are compared for different assignment function, which shows the advantage of using more complex schemes than those generally used. Results from a full band Monte Carlo simulation of a submicron Schottky diode are presented and the values of the current density for different assignment schemes are compared, showing a lower noise for the higher order schemes. Statistical enhancements by splitting of superparticles in the depletion region has been investigated. The combination of a high order assignment scheme and statistical enhancement by splitting decreases simulation runtimes considerable for a given noise tolerance.

Place, publisher, year, edition, pages
1994. Vol. T54, 268-272 p.
Keyword [en]
Monte Carlo simulation
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1978DOI: 10.1088/0031-8949/1994/T54/065 ISI: A1994PW67200066Local ID: 858OAI: oai:DiVA.org:miun-1978DiVA: diva2:27010
Available from: 2008-12-11 Created: 2008-12-11 Last updated: 2016-10-05Bibliographically approved

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Citation style
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