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Characterization of Si Wafer Bonding by Injection-Dependent Recombination Velocity
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
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1995 (English)In: Japanese Journal of Applied Physics, Part 2: Letters, ISSN 0021-4922, Vol. 34, L806-L809 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1995. Vol. 34, L806-L809 p.
Keyword [en]
Wafer bonding recombination interface
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:miun:diva-1924Local ID: 784OAI: oai:DiVA.org:miun-1924DiVA: diva2:26956
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2011-01-10Bibliographically approved

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Thungström, Göran
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CiteExportLink to record
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Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
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Language
  • de-DE
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Output format
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