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Numerical simulation of field effect transistors in 4H and 6H-SiC
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Responsible organisation
2001 (English)Conference paper, (Other academic)
Abstract [en]

Silicon Carbide is a very interesting semiconductor material for high temperature, high frequency, and high power applications. The main reasons are its high saturation velocity, large thermal conductivity, high Schottky barriers, and high breakdown voltages. High quality 4H-SiC and 6H-SiC polytype substrates and epitaxial layers are commercially available today. An additional advantage of SiC is the native oxide that allows fabrication of MOS devices. A large effort has been devoted towards the development of high performance devices in SiC. The largest success has been for unipolar devices like Schottky diodes and different kinds of MESFETs. MOSFETs have also been fabricated in both 4H- and 6H-SiC. Unfortunately, the MOSFET performance was found to be much worse than expected, due to a very low surface mobility. Nevertheless, the technology developed is very interesting and includes possible large scale integration of digital circuits operating at very high temperatures. In this work we present numerical simulations of the device performance of different Field Effect Transistors (FETs). Both full band Monte Carlo simulations and macroscopic modeling using the drift-diffusion approach have been utilized in this work. The Monte Carlo simulations have been used to extract transport parameters and to evaluate the macroscopic models in a device configuration

Place, publisher, year, edition, pages
2001.
Keyword [en]
4H-SiC, 6H-SiC, Monte Carlo, MOSFET, MESFET
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1885Local ID: 695ISBN: 0-7803-7136-4 (print)OAI: oai:DiVA.org:miun-1885DiVA: diva2:26917
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2016-10-05Bibliographically approved

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Nilsson, Hans-ErikBertilsson, KentDubaric, ErvinHjelm, Mats
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CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf