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Numerical Simulation of Field Effect Transistors in 4H- and 6H-SiC
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Responsible organisation
2002 (English)In: Journal of Wide Bandgap Materials, ISSN 1524-511X, E-ISSN 1530-8081, Vol. 9, no 4, 293-305 p.Article in journal (Refereed) Published
Abstract [en]

Numerical simulations of microscopic and macroscopic device properties of field effect transistors in 4H- and 6H-SiC are presented. The microscopic properties have been simulated using a full band (ab initio method) Monte Carlo simulation model and the macroscopic properties have been simulated using a drift-diffusion model with transport parameters obtained from the Monte Carlo simulations. Different models for the SiC/SiO2 interface in SiC MOSFETs have been evaluated and compared with experimental data. Finally, we present a comparison of simulated device performance for MOSFETs and MESFETs in 4- and 6H-SiC technologies. Both vertical (SIT) and lateral MESFET structures have been considered

Place, publisher, year, edition, pages
2002. Vol. 9, no 4, 293-305 p.
Keyword [en]
4H-SiC, 6H-SiC, Monte Carlo, simulation
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1884DOI: 10.1106/152451102024432Scopus ID: 2-s2.0-33749205974Local ID: 534OAI: oai:DiVA.org:miun-1884DiVA: diva2:26916
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2016-10-05Bibliographically approved

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Nilsson, Hans-ErikBertilsson, KentHjelm, MatsDubaric, Ervin
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Citation style
  • apa
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