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Simulation of photon and charge transport in X-ray imaging semiconductor sensors
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Responsible organisation
2002 (English)In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, ISSN 0168-9002, E-ISSN 1872-9576, Vol. 487, no 1-2, 151-162 p.Article in journal (Refereed) Published
Abstract [en]

A fully stochastic model for the imaging properties of X-ray silicon pixel detectors is presented. Both integrating and photon counting configurations have been considered, as well as scintillator-coated structures. The model is based on three levels of Monte Carlo simulations; photon transport and absorption using MCNP, full band Monte Carlo simulation of charge transport and system level Monte Carlo simulation of the imaging performance of the detector system. In the case of scintillator-coated detectors, the light scattering in the detector layers has been simulated using a Monte Carlo method. The image resolution was found to be much lower in scintillator-coated systems due to large light spread in thick scintillator layers. A comparison between integrating and photon counting readout methods shows that the image resolution can be slightly enhanced using a photon-counting readout. In addition, the proposed model has been used to study charge-sharing effects on the energy resolution in photon counting detectors. The simulation shows that charge-sharing effects are pronounced in pixel detectors with a pixel size below 170 * 170 mu m2. A pixel size of 50 * 50 mu m2 gives a highly distorted energy spectrum due to charge sharing. This negative effect can only be resolved by introducing advanced counting schemes, where neighbouring pixels communicate in order to resolve the charge sharing.

Place, publisher, year, edition, pages
2002. Vol. 487, no 1-2, 151-162 p.
Keyword [en]
X-ray sensor, pixel, Monte Carlo, simulation, charge transport
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1883DOI: 10.1016/S0168-9002(02)00959-2ISI: 000177177500024Scopus ID: 2-s2.0-0037063075Local ID: 532OAI: oai:DiVA.org:miun-1883DiVA: diva2:26915
Conference
3rd International Workshop on Radiation Imaging Detectors; Orosai, Sardinia; Italy; 23 September 2001 through 27 September 2001
Note

3rd International Workshop on Radiation Imaging Detectors, Sep 23-27, 2001, Orosei, Italy

Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2016-10-25Bibliographically approved

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Nilsson, Hans-ErikDubaric, ErvinHjelm, MatsBertilsson, Kent
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Department of Information Technology and Media
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Electrical Engineering, Electronic Engineering, Information Engineering

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CiteExportLink to record
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Citation style
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