miun.sePublications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Monte Carlo simulation of high field hole transport in 4H-SiC including band to band tunneling and optical interband transisitons
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Show others and affiliations
Responsible organisation
2002 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 314, no 1-4, 68-71 p.Article in journal (Refereed) Published
Abstract [en]

The high field hole transport in 4H-SiC has been studied using a full band Monte Carlo (MC) simulation model that includes band to band tunneling and allows mixing of the band states during carrier drift. Impact ionization coefficients along the c-axis direction have been extracted and compared with experimental data. It is shown that the band to band tunneling mechanism is crucial in order to explain experimental results. The carrier distribution function obtained from the MC simulations has been used to determine the breakdown luminescence spectra coming from interband transitions. Our results are in good agreement with the available experimental luminescence spectra for SiC polytypes, and the importance of including interband tunneling is clearly demonstrated.

Place, publisher, year, edition, pages
2002. Vol. 314, no 1-4, 68-71 p.
Keyword [en]
4H-SiC, Monte Carlo
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1881DOI: 10.1016/S0921-4526(01)01356-4ISI: 000175997500016Scopus ID: 2-s2.0-0036504001Local ID: 680OAI: oai:DiVA.org:miun-1881DiVA: diva2:26913
Note

12th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-12), Aug, 2001, Santa Fe, New Mexico

Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2016-10-17Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Nilsson, Hans-ErikHjelm, Mats
By organisation
Department of Information Technology and Media
In the same journal
Physica. B, Condensed matter
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 229 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf