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Monte Carlo simulation of multi-band carrier transport in semiconductor materials with complex unit cells
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
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2001 (English)In: SISPAD 2001, International conference on Simulation of Semiconductor Processes and devices, september 5-7, 2001, Athens, Greece, 2001, 214-217 p.Conference paper, (Other scientific)
Abstract [en]

In a traditional Monte Carlo (MC) model the carrier preserves its band identity during the free flight between scatterings. However, this assumption may not be valid in semiconductor materials with complex unit cell. A new model is needed where the traditional way to use classical equations during the free flight between scattering is replaced by a fully quantum mechanical model of the Bloch carrier dynamics between scattering events. In this work we present such a model along with simulated results of the hole initiated impact ionization coefficients of 4H-SiC

Place, publisher, year, edition, pages
2001. 214-217 p.
Keyword [en]
4H-SiC, Monte Carlo, impact ionization
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1879Local ID: 678ISBN: 3-211-83708-6 (print)OAI: oai:DiVA.org:miun-1879DiVA: diva2:26911
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2016-10-05Bibliographically approved

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CiteExportLink to record
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