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Monte Carlo simulation of vertical MESFETs in 2H, 4H and 6H-SiC
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
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2001 (English)In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 10, no 3-7, 1283-1286 p.Article in journal (Refereed) Published
Abstract [en]

The 4H-SiC static induction transistor (SIT) is a very competitive device for high frequency and high power applications (3-6 GHz range). The large breakdown voltage and the high thermal conductivity of 4H-SiC allow transistors with extremely high current density at high voltages. The SIT transistor shows better output power capabilities but the unity current-gain frequency is lower compared to a MESFET device. In this work we show, using a very accurate numerical model, that a compromise between the features given by the SIT structure and the ordinary MESFET structure can be obtained using the vertical MESFET structure. The device dimension has been selected very aggressively to demonstrate the performance of an optimized technology. We also present results from drift-diffusion simulations of devices, using transport parameters obtained from the Monte Carlo simulation. The simulations indicate that 2H-SiC is superior to both 4H and 6H-SiC for vertical devices. For lateral devices, 2H-SiC is slightly faster compared to an identical 4H-SiC device

Place, publisher, year, edition, pages
2001. Vol. 10, no 3-7, 1283-1286 p.
Keyword [en]
2H-SiC, 4H-SiC, 6H-SiC, vertical MESFET
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1878DOI: 10.1016/S0925-9635(00)00382-4ISI: 000168730600190Scopus ID: 2-s2.0-0035269296Local ID: 541OAI: oai:DiVA.org:miun-1878DiVA: diva2:26910
Note

11th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide (Diamond 2000), Sep 03-08, 2000, Oporto, Portugal

Available from: 2008-12-11 Created: 2008-12-11 Last updated: 2016-10-13Bibliographically approved

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Bertilsson, KentDubaric, ErvinNilsson, Hans-ErikHjelm, MatsPetersson, Sture
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