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Monte Carlo Simulation of 4H and 6H-SiC short channel MOSFETs
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Responsible organisation
2001 (English)In: High Temperature Electronics Network. HITEN ; 4 (Oslo) : 2001.06.05-08: Proceedings of the International Conference on High Temperature Electronics : held in Oslo, Norway, 5th - 8th June 2001, Oxford: Oxford Applied Technology Ltd, , 2001, 199- p.Conference paper, (Refereed)
Place, publisher, year, edition, pages
Oxford: Oxford Applied Technology Ltd, , 2001. 199- p.
Keyword [en]
4H-SiC, 6H-SiC, Monte Carlo, MOSFET
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1877Local ID: 528ISBN: 0-9543455-0-9 (print)OAI: oai:DiVA.org:miun-1877DiVA: diva2:26909
Available from: 2008-12-11 Created: 2008-12-11 Last updated: 2016-10-05Bibliographically approved

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Bertilson, KentHjelm, MatsNilsson, Hans-ErikPetersson, Sture
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