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A comparison between different Monte Carlo models in simulation of hole transport in 4H-SiC
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Responsible organisation
2001 (English)In: Mathematics and Computers in Simulation, ISSN 0378-4754, E-ISSN 1872-7166, Vol. 55, no 1-3, 199-208 p.Article in journal (Refereed) Published
Abstract [en]

A Monte Carlo (MC) study of the hole transport in 4H-SiC is presented using three different MC models. The three models represent different approximation levels regarding band structure and scattering formulation. The most advanced model is a completely k-vector dependent full band model while the simplest model uses three analytical bands with energy dependent scattering rates. The intermediate MC model uses a full band structure calculated using a simple k.p formulation. A comparison between the models in terms of coupling constants, scattering rate, temperature dependent mobility and saturation velocity is presented

Place, publisher, year, edition, pages
2001. Vol. 55, no 1-3, 199-208 p.
Keyword [en]
4H-SiC, Monte Carlo, charge transport
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1866DOI: 10.1016/S0378-4754(00)00262-7ISI: 000167385700021Scopus ID: 2-s2.0-0034917661Local ID: 658OAI: oai:DiVA.org:miun-1866DiVA: diva2:26898
Note

2nd IMACS Seminar on Monte Carlos Methods, Jun 07-11, 1999, Varna, Bulgaria

Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2016-10-11Bibliographically approved

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