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A full band Monte Carlo study of high field carrier transport in 4H-SiC
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Responsible organisation
2000 (English)In: SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 / [ed] Carter CH; Devaty RP; Rohrer GS, 2000, Vol. 338-342, 765-768 p.Conference paper, (Refereed)
Abstract [en]

The high field transport properties of 4H-SiC have been studied using a bipolar full band ensemble Monte Carlo model. The impact ionization transition rates and the phonon scattering rates for both electrons and holes have been calculated numerically from the full band structure. The simulation results show a large anisotropy in the impact ionization coefficients for both electrons and holes.

Place, publisher, year, edition, pages
2000. Vol. 338-342, 765-768 p.
Series
Materials Science Forum, 338-3
Keyword [en]
4H-SiC, Monte Carlo, charge transport
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1865ISI: 000165996700186Scopus ID: 2-s2.0-0033715587Local ID: 657OAI: oai:DiVA.org:miun-1865DiVA: diva2:26897
Conference
ICSCRM '99: The International Conference on Silicon Carbide and Related Materials; Research Triangle Park, NC, USA; 10 October 1999 through 15 October 1999
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2016-10-10Bibliographically approved

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CiteExportLink to record
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Citation style
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