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A study of the anisotropic transport in 4H and 6H silicon carbide by Monte Carlo simulation
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
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1999 (English)In: Physica scripta Topical issues, ISSN 0281-1847, Vol. 79, 42-45 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1999. Vol. 79, 42-45 p.
Keyword [en]
4H-SiC, 6H-SiC, Monte Carlo
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:miun:diva-1863Local ID: 655OAI: oai:DiVA.org:miun-1863DiVA: diva2:26895
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2016-10-05Bibliographically approved

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Hjelm, MatsNilsson, Hans-Erik
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CiteExportLink to record
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Citation style
  • apa
  • harvard1
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