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Simulation of anisotropic Breakdown in 4H-SiC Diodes
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Responsible organisation
2000 (English)In: IEEE Workshop on Computers in Power Electronics: COMPEL 2000, IEEE , 2000, 118-120 p.Conference paper, (Refereed)
Abstract [en]

The breakdown characteristics of two-dimensional 4H-SiC diode structures have been studied using an anisotropic drift-diffusion model. The degree of anisotropy was estimated from recent full band Monte Carlo simulations. Identical diode structures have previously been used in the literature to measure the hole impact ionization coefficients of 4H-SiC. The reported measurements from different research groups show large differences in the impact ionization coefficients. Our numerical simulations show that the differences in these measurements can be explained by the difference in device geometry used by the research teams if one considers an anisotropic impact ionization process. This indicates that it is very important to consider anisotropic impact ionization in design and characterization of 4H-SiC power devices.

Place, publisher, year, edition, pages
IEEE , 2000. 118-120 p.
Keyword [en]
SiC breakdown
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1830ISI: 000166855500020Scopus ID: 2-s2.0-0034462638Local ID: 544OAI: oai:DiVA.org:miun-1830DiVA: diva2:26862
Conference
7th Workshop on Computers in Power Electronics; Blacksburg, VA, USA; ; 16 July 2000 through 18 July 2000
Available from: 2008-12-11 Created: 2008-12-11 Last updated: 2016-10-11Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
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