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Simulations of Submicron MOSFETs in 2H, 4H and 6H-SiC
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
2002 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. 101, 14-17 p.Article in journal (Refereed) Published
Abstract [en]

In this paper, we present numerical studies of the high frequency performance of a submicron MOSFET in 2H-, 4H- and 6H-SiC. The studies are based on simulations where commercial two-dimensional drift-diffusion and hydrodynamic carrier transport models have been used. The results have been compared with those obtained from full band Monte Carlo simulations. The Monte Carlo carrier transport model is based on data from a full potential band structure calculation using the Local Density Approximation to the Density Functional Theory. In 6H-SiC the bulk transport properties in the direction perpendicular to the c-axis, are slightly lower than in 2H- and 4H-SiC. However, in the direction parallel to the c-axis the transport properties are considerably less favourable than in the other two polytypes. The effects of these differences, on surface mobility device performance and carrier energy, have been studied.

Place, publisher, year, edition, pages
2002. Vol. 101, 14-17 p.
Keyword [en]
SiC MOSFET 2H 4H 6H
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1825DOI: 10.1238/Physica.Topical.101a00014ISI: 000179465600004Scopus ID: 2-s2.0-0036441512Local ID: 585OAI: oai:DiVA.org:miun-1825DiVA: diva2:26857
Note

19th Nordic Semiconductor Meeting (NSM19), May 20-23, 2001, Copenhagen, Denmark

Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2016-10-17Bibliographically approved

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Dubaric, ErvinBertilsson, KentNilsson, Hans-Erik
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CiteExportLink to record
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Citation style
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