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Monte Carlo simulation of electron transport in 2H-SiC using a three valley analytical conduction band model
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
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1999 (English)In: Journal of Applied Physics, Vol. 86, no 11, 6230-6233 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1999. Vol. 86, no 11, 6230-6233 p.
Keyword [en]
2H-SiC, Monte Carlo, charge transport
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1814DOI: 10.1063/1.371677ISI: 000083729000047Local ID: 552OAI: oai:DiVA.org:miun-1814DiVA: diva2:26846
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2016-10-05Bibliographically approved

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Nilsson, Hans-ErikHjelm, Mats
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CiteExportLink to record
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