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Full band Monte Carlo simulation of a 100 nm 4H-SiC high frequency MOSFET
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
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1998 (English)In: Compound Semiconductors 1998. Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors 12-16 Oct. 1998 , Nara, Japan, 1998, 273-278 p.Conference paper, Published paper (Other academic)
Place, publisher, year, edition, pages
1998. 273-278 p.
Keyword [en]
Monte Carlo, 4H-SiC, MOSFET
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1811ISI: 000177562700043Local ID: 548ISBN: 0 7503 0611 4 (print)OAI: oai:DiVA.org:miun-1811DiVA: diva2:26843
Available from: 2008-12-11 Created: 2008-12-11 Last updated: 2016-10-05Bibliographically approved

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Hjelm, MatsNilsson, Hans-ErikDubaric, ErvinPetersson, Sture
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CiteExportLink to record
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