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A semi-analytic model of the Permeable Base Transistor
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Responsible organisation
1994 (English)In: Physica scripta. T, ISSN 0281-1847, Vol. T54, 159-164 p.Article in journal (Refereed) Published
Abstract [en]

The I-V characteristics of the Permeable Base Transistor (PBT) has been investigated in order to find a simple and practical model for use in circuit designs. Two possible approaches has been discussed, a one-dimensional analytical solution and a semi-analytical solution mixing analytical and empirical methods. The semi-analytical model developed in this paper offers high accuracy and a simple and fast evaluation. All model parameters can be extracted from a set of I-V curves from two typical transistors with different threshold voltages. An analytical small signal model has been developed that agrees very well with two-dimensional simulations.

Place, publisher, year, edition, pages
1994. Vol. T54, 159-164 p.
Keyword [en]
Transistor models
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1791DOI: 10.1088/0031-8949/1994/T54/039Local ID: 497OAI: oai:DiVA.org:miun-1791DiVA: diva2:26823
Available from: 2008-12-11 Created: 2008-12-11 Last updated: 2016-10-05Bibliographically approved

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Nilsson, Hans-ErikPetersson, Sture
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