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Three Dimensional Architectures of Ultra-high Density Semiconducting Nanowires Deposited on Chip
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2003 (English)In: Journal of the American Chemical Society, ISSN 0002-7863, E-ISSN 1520-5126, Vol. 125, no 20, 6284-6288 p.Article in journal (Refereed) Published
Abstract [en]

We report a "clean" and fast process, utilizing supercritical carbon dioxide, for producing ultrahigh densities, up to 10(12) nanowires per square centimeter, of ordered germanium nanowires on silicon and quartz substrates. Uniform mesoporous thin films were employed as templates for the nucleation and growth of unidirectional nanowire arrays orientated almost perpendicular to a substrate surface. Additionally, these nanocomposite materials display room-temperature photoluminescence (PL), the energy of which is dependent on the diameter of the encased nanowires. The ability to synthesis ultrahigh-density arrays of semiconducting nanowires on-chip is a key step in future "bottom-up" fabrication of multilayered device architectures for nanoelectronic and optoelectronic devices.

 

 

Place, publisher, year, edition, pages
2003. Vol. 125, no 20, 6284-6288 p.
Keyword [en]
nanotechnology nanoscience nanowires
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-1746PubMedID: 12785861Local ID: 424OAI: oai:DiVA.org:miun-1746DiVA: diva2:26778
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2017-12-13Bibliographically approved

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Olin, Håkan

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