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Full-band Monte Carlo simulation of electron transport in 3C-SiC
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media. Royal Institute of Technology (KTH).
Responsible organisation
2002 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 389-393, 537-540 p.Article in journal (Refereed) Published
Abstract [en]

A full band Monte Carlo study of the electron transport in 3C-SiC is presented based on ab initio band structure calculation using the Local Density Approximation (LDA) to the Density Functional Theory (DFT). The scattering rates and impact ionization transition rates have been calculated numerically from the band structure using both energy dispersion and wave functions. Coupling constants for the phonon interactions have been deduced by fitting the simulated mobility as a function of lattice temperature to experimental data. The saturation velocity was found to be approximately 2.2*107 cm/s with a visible negative differential mobility above 600 kV/cm. The electron initiated impact ionization coefficients were found to be 2 to 10 times stronger than reported values for the hole initiated impact ionization

Place, publisher, year, edition, pages
2002. Vol. 389-393, 537-540 p.
Keyword [en]
3C-SiC, Monte Carlo, charge transport
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1676ISI: 000177321100129Scopus ID: 2-s2.0-34247249332Local ID: 555OAI: oai:DiVA.org:miun-1676DiVA: diva2:26708
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2016-10-05Bibliographically approved

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