miun.sePublications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Schottky Barriers on 6H-SiC
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-8325-5177
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Responsible organisation
1999 (English)In: Physica scripta. T, ISSN 0281-1847, Vol. T79, 297-302 p.Article in journal (Refereed) Published
Abstract [en]

Schottky diodes have been fabricated by deposition of Ti, Ni, Cu on epitaxial layers of p-type and n-type 6H-SiC. The fabricated devices have been characterised by CV, IV and photoelectric measurements. The results from the different characterisations are compared. The effect of incomplete ionisation of dopants and high series resistance on the results from CV-measurements is discussed.

In addition to the results obtained from the experiments presented in this paper data has also been collected from other research groups in order to investigate the mechanism of Schottky barrier formation on Silicon Carbide. The results show that for a number of metals the barrier height is strongly correlated to the difference between the electron affinity of the semiconductor and the metal work function, while other metals show significant deviation from the Schottky-Mott theory.

Place, publisher, year, edition, pages
1999. Vol. T79, 297-302 p.
Keyword [en]
Schottky Barrier 6H silicon carbide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1582DOI: 10.1238/Physica.Topical.079a00297Local ID: 800OAI: oai:DiVA.org:miun-1582DiVA: diva2:26614
Available from: 2008-12-11 Created: 2008-12-11 Last updated: 2016-10-05Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Fröjdh, ChristerThungström, GöranNilsson, Hans-ErikPetersson, Sture
By organisation
Department of Information Technology and Media
In the same journal
Physica scripta. T
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 291 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf