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Deposition of Scintillating Layers of Bismuth Germanate (BGO) Films for X-ray detector applications
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-8325-5177
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
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1998 (English)In: IEEE Transactions on Nuclear Science, ISSN 0018-9499, Vol. 45, no 3, 525-527 p.Article in journal (Refereed) Published
Abstract [en]

Bi4Ge3O12 films were deposited by pulsed laser ablation on glass and SiO2/Si substrates. The crystal structures of the films depend on the deposition temperature. XRD patterns indicate that the films deposited at substrate temperature less than 400°C are amorphous. The as deposited amorphous films can be crystallized by post rapid thermal annealing (RTA) in the temperature window from 750°C to 800°C for 2 minutes in a oxygen ambient environment. RBS measurements confirm that the films have the same chemical composition as that of the target. The surface morphology of the films were characterized by atomic force microscopy (AFM)

Place, publisher, year, edition, pages
1998. Vol. 45, no 3, 525-527 p.
Keyword [en]
x ray detectors scintillator deposition laser ablation
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1579DOI: 10.1109/23.682441Local ID: 798OAI: oai:DiVA.org:miun-1579DiVA: diva2:26611
Available from: 2008-12-11 Created: 2008-12-11Bibliographically approved

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Fröjdh, ChristerThungström, GöranPetersson, Sture
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