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Monte Carlo study of high-field carrier transport in 4H-SiC including band-to-band tunneling
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
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2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, Vol. 93, no 2, 1099-1107 p.Article in journal (Refereed) Published
Abstract [en]

A full-band ensemble Monte Carlo simulation has been used to study the high-field carrier transport properties of 4H-SiC. The complicated band structure of 4H-SiC requires the consideration of band-to-band tunneling at high electric fields. We have used two models for the band-to-band tunneling; one is based on the overlap test and the other on the solution of the multiband Schrodinger equations. The latter simulations have only been performed for holes in the c-axis direction, since the computer capacity requirement are exceedingly high. Impact-ionization transition rates and phonon scattering rates have been calculated numerically directly from the full band structure. Coupling constants for the phonon interaction have been deduced by fitting of the simulated low-field mobility as a function of lattice temperature to experimental data. Secondary hot electrons generated as a consequence of hole-initiated impact ionization are considered in the study for both models of band-to-band tunneling. When the multiband Schrodinger equation model is used for holes in the c-axis direction, a significant change in the electron energy distribution is found, since the hole impact-ionization rate is very much increased with this model. The secondary electrons increase the average energy of the electron distribution leading to a significant increase in the electron-initiated impact-ionization coefficients. Our simulation results clearly show that both electrons and holes have to be considered in order to understand electron-initiated impact ionization in 4H-SiC

Place, publisher, year, edition, pages
2003. Vol. 93, no 2, 1099-1107 p.
Keyword [en]
4H-SiC, Monte Carlo, charge transport
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1578DOI: 10.1063/1.1530712ISI: 000180134200047Scopus ID: 2-s2.0-0037439676Local ID: 556OAI: oai:DiVA.org:miun-1578DiVA: diva2:26610
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2016-10-21Bibliographically approved

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Hjelm, MatsNilsson, Hans-Erik
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CiteExportLink to record
Permanent link

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Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
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Output format
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  • asciidoc
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