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Processing and characterisation of an etched groove Permeable
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-8325-5177
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
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1994 (English)In: Physica scripta. T, ISSN 0281-1847, Vol. T54, 56-59 p.Article in journal (Refereed) Published
Abstract [en]

The Permeable Base Transistor (PBT) is generally considered as an interesting device for high speed applications. PBTs have been fabricated on Silicon and Gallium Arsenide by a number of groups. In this paper we reported on the fabrication of an etched groove PBT structure on 6H-SiC using Ti as contact metal for all electrodes. The devices have been characterised by DC-measurements. The transistors show the normal IV-characteristics for a such a device except for a parasitic series diode at the drain electrode. The breakdown voltage of the gate-drain diode is generally as high as around 60 V even without passivation of the sidewalls of the grooves.

Place, publisher, year, edition, pages
1994. Vol. T54, 56-59 p.
Keyword [en]
Permeable base transistor Silicon carbide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1564DOI: 10.1088/0031-8949/1994/T54/013ISI: A1994PW67200014Local ID: 775OAI: oai:DiVA.org:miun-1564DiVA: diva2:26596
Available from: 2008-12-11 Created: 2008-12-11 Last updated: 2016-10-05Bibliographically approved

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Fröjdh, ChristerThungström, GöranNilsson, Hans-ErikPetersson, Sture
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