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Processing of silicon UV-photodetectors
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Royal Institute of Technology, Dept. Electronics, Electrum 229, S., Stockholm.
Responsible organisation
2001 (English)In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, ISSN 0168-9002, E-ISSN 1872-9576, Vol. 460, no 1, 165-184 p.Article in journal (Refereed) Published
Abstract [en]

UV-enhanced photodetectors of both n+-p and p+-n type have been processed in silicon. Photodetectors of the p+-n type display a responsivity close to the theoretical limit with an antireflective coating of either thermally grown dry silicon dioxide or deposited oxide (TEOS), followed by a short wet oxidizing step. This holds, irrespective of whether the detector window is doped by boron through ion implantation or diffusion from a solid source. However, for p+-n photodiodes with a TEOS-oxide in the as-deposited state the responsivity decreases substantially for wavelenghts below 500 nm compared to the theoretical predictions. This is attributed to a high recombination velocity at the silicon dioxide/silicon interface, as supported by computer simulations of the detector performance. In contrast, n+-p photodiodes are found to be rather insensitive with respect to the properties of the silicon dioxide/silicon interface. These results provide the first experimental demonstration that high built in electric fields, caused by abrupt dopant profiles, can suppress the influence of a high interface carrier recombination velocity.

Place, publisher, year, edition, pages
2001. Vol. 460, no 1, 165-184 p.
Keyword [en]
ultra violet detectors processing
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1563DOI: 10.1016/S0168-9002(00)01111-6ISI: 000167597000025Scopus ID: 2-s2.0-0035277059Local ID: 773OAI: oai:DiVA.org:miun-1563DiVA: diva2:26595
Note

1st International Workshop on Radiation Imaging Detectors; Sundsvall, Swed; 13 June 1999 through 16 June 1999

Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2016-10-13Bibliographically approved

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Thungström, GöranDubaric, Ervin
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Electrical Engineering, Electronic Engineering, Information Engineering

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CiteExportLink to record
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Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
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  • text
  • asciidoc
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