miun.sePublications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Fabrication of an integrated Delta E-E-silicon detector by wafer bonding using cobalt disilicide
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Show others and affiliations
1997 (English)In: Nuclear Instruments & Methods in Physics Research. Section A. Accelerators, Spectrometers, Detectors, and Associated Equipment, Vol. 391, no 2, 315-328 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1997. Vol. 391, no 2, 315-328 p.
Keyword [en]
integrated DE-E detctor Wafer bonding
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1560DOI: 10.1016/S0168-9002(97)00408-7ISI: A1997XL50700008Local ID: 770OAI: oai:DiVA.org:miun-1560DiVA: diva2:26592
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2011-01-10Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Thungström, Göran
By organisation
Department of Information Technology and Media
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 252 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf