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Contacts to Monocrystalline N- and P-type Silicon by Wafer Bonding Using
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-8325-5177
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Responsible organisation
1994 (English)In: Physica scripta. T, ISSN 0281-1847, Vol. T54, 77-80 p.Article in journal (Refereed) Published
Abstract [en]

Contacts to monocrystalline silicon have been prepared by wafer bonding using cobalt disilicide as an interfacial layer. Bonding has been carried out with three different structures: n+ -CoSi2-n+, p+ -CoSi2-p+ and p+ -CoSi2-n+. The intermediate cobalt disilicide layers had a thickness of either 700 Å or 5250 Å. The bonding interface was characterized by electrical measurement (IV) and Secondary-ion mass spectrometry (SIMS) of the formed contacts. The n+ -CoSi2-n+ and p+ -CoSi2-p+ bondings display an ohmic behaviour. The resistance of the bonded structures was in the range expected for the bulk silicon used (0.1-0.05 Ω cm). The p+ -CoSi2-n+ structures shows a non ohmic behaviour. An evaluation of the SIMS profiles reveals that the non-linear behaviour of the p+ -CoSi2-interface is due to phosphorous diffusion from the n-doped region across the silicide to the p-doped area. It is shown that the phosphorous compensates the boron dopant.

Place, publisher, year, edition, pages
1994. Vol. T54, 77-80 p.
Keyword [en]
Wafer bonding ohmic contacts cobalt silicide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1558DOI: 10.1088/0031-8949/1994/T54/018 Local ID: 769OAI: oai:DiVA.org:miun-1558DiVA: diva2:26590
Available from: 2008-12-11 Created: 2008-12-11Bibliographically approved

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Thungström, GöranFröjdh, ChristerPetersson, Sture
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