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Buried Cobalt Silicide Layers in Silicon Created by Wafer Bonding
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1994 (English)In: Journal of the Electrochemical Society, ISSN 0013-4651, Vol. 141, no 10, 2829-2833 p.Article in journal (Refereed) Published
Abstract [en]

A buried conductive layer in silicon has been created using wafer bonding technique, with a cobalt interfacial layer.Co-coated silicon wafers were brought into contact with either similar or uncoated wafers at room temperature. CoSi2 wasthen formed through a solid-phase reaction, during an anneal at 700 to 900°C. A 700 Å buried CoSi2-layer, with a resistivityof approximately 21 µ cm, was achieved. Good adhesion, as measured by tensile strength testing, between the wafers wasachieved. Transmission electron microscopic investigations (Co-coated wafer bonded to bare silicon) showed that thesilicide has not grown into the opposite wafer, and that an amorphous layer exists between the silicide and the siliconsurface. The presence of such a layer has been confirmed by electrical characterization.

Place, publisher, year, edition, pages
1994. Vol. 141, no 10, 2829-2833 p.
Keyword [en]
Wafer bonding cobalt disilicide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1556DOI: 10.1149/1.2059239 Local ID: 767OAI: oai:DiVA.org:miun-1556DiVA: diva2:26588
Available from: 2008-12-11 Created: 2008-12-11Bibliographically approved

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Thungström, GöranPetersson, Sture
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