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The Effect of Different Transport Models in Simulation of High Frequency 4H-SiC and 6H-SiC Vertical MESFETs
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
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2001 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 45, no 5, 645-653 p.Article in journal (Refereed) Published
Abstract [en]

A full band Monte Carlo (MC) study of the high frequency performance of a 4H-SiC Short channel vertical MESFET is presented. The MC model used is based on data from a full potential band structure calculation using the local density approximation to the density functional theory. The MC results have been compared with simulations using state of the art drift-diffusion and hydrodynamic transport models. Transport parameters such as mobility, saturation velocity and energy relaxation time are extracted from MC simulations

Place, publisher, year, edition, pages
2001. Vol. 45, no 5, 645-653 p.
Keyword [en]
4H-SiC, 6H-SiC, vertical MESFET
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1547DOI: 10.1016/S0038-1101(01)00127-7ISI: 000169397100004Scopus ID: 2-s2.0-0035333259Local ID: 539OAI: oai:DiVA.org:miun-1547DiVA: diva2:26579
Available from: 2008-12-11 Created: 2008-12-11 Last updated: 2016-10-13Bibliographically approved

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Bertilsson, KentNilsson, Hans-ErikHjelm, MatsPetersson, Sture
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