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Interstitial transition atom impurities in silicon: Electronic structure and lattice relaxation
Responsible organisation
1984 (English)In: Journal of Physics C (Solid State Physics), ISSN 0022-3719, Vol. 17, no 34, 6047-6062 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1984. Vol. 17, no 34, 6047-6062 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-813Local ID: 3672OAI: oai:DiVA.org:miun-813DiVA: diva2:25845
Available from: 2008-09-30 Created: 2009-11-18Bibliographically approved

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Lindefelt, Ulf
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CiteExportLink to record
Permanent link

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Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf