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Low temperature scanning tunneling microscopy spectroscopy study of two different layers in poly-type 4Hb-TaS2 at 4.2 K
1997 (English)In: Journal of the Korean Physical Society, ISSN 0374-4884, E-ISSN 1976-8524, Vol. 31, p. 127-130Article in journal (Refereed) Published
Abstract [en]

Using scanning tunneling microscope (STM), we have fabricated steps of 4Hb-TaS2 with the height similar to 6 Angstrom and investigated the electronic and atomic structures on the two different layers near the step region at 4.2 K. The measured STM images and tunneling spectra revealed completely different atomic and electronic structures of the 1T and 1H type layers. The 1T type layers showed the typical root 13 x root 13 charge-density-wave (CDW) structures showing insulating behaviors, whereas the 1H type layers showed metallic behaviors and had the triangular atomic structure with a very weak 3x3 CDW superlattice at a low bias voltage and with a superposed root 13 x root 13 CDW superlattice at a high positive bias voltage. The bias dependent STM image on the surface of 1H layer can be explained by the energy dependent tunneling process between STM tip and a stack of metallic 1H layer and insulating 1T layer.

Place, publisher, year, edition, pages
1997. Vol. 31, p. 127-130
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-9874OAI: oai:DiVA.org:miun-9874DiVA, id: diva2:236693
Note
International Conference on Advanced Materials and Devices 96, KANGWANDO, SOUTH KOREA, JUN 11-13, 1996Available from: 2009-09-24 Created: 2009-09-24 Last updated: 2017-12-13Bibliographically approved

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Olin, Håkan

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