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Atomic- and electronic-structure study on the layers of 4Hb-TaS2 prepared by a layer-by-layer etching technique
Department of Physics, Chalmers University of Technology.ORCID iD: 0000-0001-7329-3359
1995 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 52, no 20, p. 14388-14391Article in journal (Refereed) Published
Abstract [en]

We have studied the atomic and electronic structures of 4Hb-TaS2, which has alternating layers of the 1T and 1H type, at room temperature and 77 K, using a scanning tunneling microscope. Using a layer-by-layer etching technique, we fabricated staircases with alternating layers of the 1T and 1H type. The T-type layers showed the typical √13×√13 charge-density-wave structures, whereas the H-type layers had the triangular atomic structure at both temperatures. The measured tunneling spectra of each layer at 77 K showed entirely different characteristics; the 1H layer remained in the metallic state, whereas the 1T layer showed an insulating behavior with a wide opening of the energy gap at the Fermi level at 77 K.

Place, publisher, year, edition, pages
1995. Vol. 52, no 20, p. 14388-14391
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Natural Sciences
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URN: urn:nbn:se:miun:diva-9858DOI: 10.1103/PhysRevB.52.R14388OAI: oai:DiVA.org:miun-9858DiVA, id: diva2:236675
Available from: 2009-09-24 Created: 2009-09-24 Last updated: 2017-12-13Bibliographically approved

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Olin, Håkan

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