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Defect switching in a mesoscopic sample induced by a scanning tunnelling microscope
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1994 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 6, p. L473-L478Article in journal (Refereed) Published
Abstract [en]

A new method is introduced to study electron transport on the mesoscopic scale. A scanning tunnelling microscope (STM) tip is used both to form a point-contact potential probe to a thin film and to affect scattering centres in its vicinity. We detect abrupt changes in the voltage with this probe as a function of both tip position and tip-sample voltage. These changes could be interpreted as due to spatial shifts of scattering centres in the film surface.

 

Place, publisher, year, edition, pages
1994. Vol. 6, p. L473-L478
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Natural Sciences
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URN: urn:nbn:se:miun:diva-9855DOI: 10.1088/0953-8984/6/33/001OAI: oai:DiVA.org:miun-9855DiVA, id: diva2:236673
Available from: 2009-09-24 Created: 2009-09-24 Last updated: 2017-12-13Bibliographically approved

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Olin, Håkan

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