Nanometer-Thick ZnO/SnO2Heterostructures Grown on Alumina for H2S SensingShow others and affiliations
2022 (English)In: ACS Applied Nano Materials, E-ISSN 2574-0970, Vol. 5, no 5, p. 6954-6963Article in journal (Refereed) Published
Abstract [en]
Designing heterostructure materials at the nanoscale is a well-known method to enhance gas sensing performance. In this study, a mixed solution of zinc chloride and tin (II) chloride dihydrate, dissolved in ethanol solvent, was used as the initial precursor for depositing the sensing layer on alumina substrates using the ultrasonic spray pyrolysis (USP) method. Several ZnO/SnO2 heterostructures were grown by applying different ratios in the initial precursors. These heterostructures were used as active materials for the sensing of H2S gas molecules. The results revealed that an increase in the zinc chloride in the USP precursor alters the H2S sensitivity of the sensor. The optimal working temperature was found to be 450 °C. The sensor, containing 5:1 (ZnCl2: SnCl2·2H2O) ratio in the USP precursor, demonstrates a higher response than the pure SnO2 (∼95 times) sample and other heterostructures. Later, the selectivity of the ZnO/SnO2 heterostructures toward 5 ppm NO2, 200 ppm methanol, and 100 ppm of CH4, acetone, and ethanol was also examined. The gas sensing mechanism of the ZnO/SnO2 was analyzed and the remarkably enhanced gas-sensing performance was mainly attributed to the heterostructure formation between ZnO and SnO2. The synthesized materials were also analyzed by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray, transmission electron microscopy, and X-ray photoelectron spectra to investigate the material distribution, grain size, and material quality of ZnO/SnO2 heterostructures.
Place, publisher, year, edition, pages
2022. Vol. 5, no 5, p. 6954-6963
Keywords [en]
gas sensors, H2S, heterostructures, ultrasonic spray pyrolysis, ZnO/SnO2
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:miun:diva-45084DOI: 10.1021/acsanm.2c00940ISI: 000833967000097Scopus ID: 2-s2.0-85130057633OAI: oai:DiVA.org:miun-45084DiVA, id: diva2:1662130
2022-05-312022-05-312022-08-18Bibliographically approved