Mid Sweden University

miun.sePublications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Synthesis and characterizations of CdS nanorods by SILAR method: effect of film thickness
Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur, India.
Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur, India.
Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur, India.
Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur, India.
Show others and affiliations
2011 (English)In: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 46, p. 5009-5015Article in journal (Refereed) Published
Abstract [en]

In this investigation, we have successfully synthesized CdS nanorods by simple and inexpensive successive ionic layer adsorption and reaction (SILAR) method. The effect of film thickness on the physico-chemical properties such as structural, morphological, wettability, optical, and electrical properties of CdS nanorods has been investigated. The XRD pattern revealed that CdS films are polycrystalline with hexagonal crystal structure. SEM and TEM images showed that CdS film surface are composed of spherical grains along with some spongy cluster and an increase in film thickness up to 1.23 μm causes the formation of matured nanorods having diameter 150–200 nm. The increases in water contact angle form 105° to 130° have been observed as film thickness increases from 0.13 to 1.23 μm indicating hydrophobic nature. The optical band gap was found to be increased from 2.02 to 2.2 eV with increase in film thickness. The films showed the semiconducting behavior with room temperature electrical resistivity in the range of 104–10Ω cm and have n-type electrical conductivity.

Place, publisher, year, edition, pages
Springer, 2011. Vol. 46, p. 5009-5015
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-40297DOI: 10.1007/s10853-011-5421-zOAI: oai:DiVA.org:miun-40297DiVA, id: diva2:1478679
Available from: 2020-10-22 Created: 2020-10-22 Last updated: 2020-11-11Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full text

Authority records

Phadatare, Manisha R.

Search in DiVA

By author/editor
Phadatare, Manisha R.
In the same journal
Journal of materials science. Materials in electronics
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 56 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf