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Study of n-type doping in germanium by temperature based PF+ implantation
Chinese Academy of Sciences, Beijing, China.
Chinese Academy of Sciences, Beijing, China.
Chinese Academy of Sciences, Beijing, China.
Chinese Academy of Sciences, Beijing, China.
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2020 (English)In: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 31, p. 161-166Article in journal (Refereed) Published
Abstract [en]

Incorporation of P in germanium was studied by using PF+ molecular implantation in a range from room temperature to 400 °C. The presence of F acted as a barrier for P in-diffusion and resulted in higher activation of P at room temperature. In addition, it is found that when the implantation is performed at 400 °C, the residual defects are stable and the diffusion of P can be blocked during activation annealing. Therefore, the final junction depth could be well controlled by the implantation process itself. This method is meaningful for the shallow junction formation in sub 14-nm Ge-based FinFETs or high-performance photodetectors. 

Place, publisher, year, edition, pages
2020. Vol. 31, p. 161-166
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:miun:diva-38204DOI: 10.1007/s10854-019-02522-3OAI: oai:DiVA.org:miun-38204DiVA, id: diva2:1384536
Available from: 2020-01-10 Created: 2020-01-10 Last updated: 2020-01-21Bibliographically approved

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Radamson, Henry H.

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