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Understanding dipole formation at dielectric/dielectric hetero-interface
Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China.
Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China.
Dept. of Phys. & Electron. Sci., Weifang Univ., Weifang, China.
Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China.
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2018 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 113, no 18, article id 0003-6951Article in journal (Refereed) Published
Abstract [en]

Band alignment and dipole formation at the hetero-interface still remain fascinating and, hence, are being intensively investigated. In this study, we experimentally investigate the dipole formation by employing a dielectric/dielectric (Al2O3/GeO2) interface. We investigate the dipole dependence on various post-deposition annealing (PDA) ambiences from the viewpoints of electrical extraction and the X-ray photoelectron spectroscopy measurement. The core level shift at the Al2O3/GeO2 interface is consistent with the dipole changes in various PDA ambiences. We discover that the dipole formation can be well explained by the interface gap state and charge neutrality level theory. These results further confirm the feasibility of gap state theory in explaining the band alignment at hetero-junctions. This study can be a booster to enhance the comprehension of dipole origin at hetero-junction interfaces.

Place, publisher, year, edition, pages
2018. Vol. 113, no 18, article id 0003-6951
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-37631DOI: 10.1063/1.5049423OAI: oai:DiVA.org:miun-37631DiVA, id: diva2:1368140
Available from: 2019-11-06 Created: 2019-11-06 Last updated: 2020-01-10Bibliographically approved

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Radamson, Henry H.

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