The high frequency capability and low on-state losses of Gallium Nitride (GaN) transistors offer the potential to increase converter efficiency and/or reduce heatsink and passive component size. This paper investigates the use of GaN technology to enhance the performance of power factor correction (PFC) and LLC converters for battery charging applications. First the efficiency performance of non-isolated PFC converters using GaN transistors is compared by simulation, the asymmetric bridgeless PFC converter is shown to achieve the best efficiency, with a predicted figure of 99% in a 1MHz, 200W design. The predictions are validated by an experimental prototype using a GS66502B, GaN Systems E-mode GaN transistor. Then the efficiency comparison of the PFC and LLC converter using GaN devices for battery charging applications is included in the paper. The experimental results of the PFC converter with GaN devices are also included. Additionally, this paper includes the analysis and design of a common mode input filter for the GaN-based high frequency converters for battery charging application. The size of both the converters using GaN devices is reduced by 40% than the converters based on Si devices. The switching loss comparison of GaN and Si devices are also included in the paper.