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Highly sensitive silicon detectors of thermal neutrons
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media. (STC)ORCID iD: 0000-0002-8325-5177
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2007 (English)In: Nuclear Science Symposium Conference Record, 2006. IEEE. Vol 3., IEEE conference proceedings, 2007, Vol. 3, 1346-1348 p.Conference paper, Published paper (Refereed)
Abstract [en]

Planar semiconductor diodes supplemented with a layer of an appropriate neutron converter such as 6LiF can be used for thermal neutron counting or imaging. Neutrons interacting in the converter generate alphas and tritons which enter the semiconductor and are detected there. However, simple planar devices suffer from limited detection efficiency which cannot reach more than about 5%. The limit in detection efficiency can be overcome by etching a 3D microstructure of trenches, pores or columns in the detector and filling it with the neutron converter. The overall neutron detection efficiency of such structure with pores was simulated. The results indicate an increase in the detection efficiency by factor of 6 in comparison with a standard planar neutron detector. Samples with different silicon column sizes were fabricated to study the electrical properties of 3D structures. The charge collection efficiency in silicon columns from 10 μm to 800 μm wide and 80 μm high was measured. Single pad detectors with pores were also fabricated and tested for thermal neutron detection. The samples have square pores of 20 μm wide, ~60 μm deep. The pore pitch is 70 μm. 6LiF was used as the neutron converter in all cases. Pulse height spectra of the filled samples irradiated by thermal neutrons were measured. The measurement proved functionality of such detectors and its usability for thermal neutron detection.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2007. Vol. 3, 1346-1348 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-8071DOI: 10.1109/NSSMIC.2006.354152Scopus ID: 2-s2.0-38649087398ISBN: 1-4244-0560-2 (print)ISBN: 9781424405619 OAI: oai:DiVA.org:miun-8071DiVA: diva2:133125
Conference
2006 IEEE Nuclear Science Symposium, Medical Imaging Conference and 15th International Workshop on Room-Temperature Semiconductor X- and Gamma-Ray Detectors, Special Focus Workshops, NSS/MIC/RTSD; San Diego, CA; United States; 29 October 2006 through 4 November 2006; Category number06CH37832; Code 70690
Available from: 2009-01-07 Created: 2009-01-07 Last updated: 2017-10-31Bibliographically approved

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Fröjdh, ChristerPetterson, StureThungström, Göran
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CiteExportLink to record
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Citation style
  • apa
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