Investigation of radiation hardness in lateral position sensitive detector, irradiated with 13.5 nm photonsShow others and affiliations
2018 (English)In: Journal of Instrumentation, E-ISSN 1748-0221, Vol. 13, article id C12015Article in journal (Refereed) Published
Abstract [en]
Radiation hardness measurements have been done by irradiating lateral position sensitive (Si) detectors (LPSD) with 93 eV photons. Three different passivation layers have been investigated, SiO2, oxynitride and deposited 4 nm titanium-layer, on p in n-substrate LPSD and deposited 4 nm titanium layer on n in p-substrate LPSD. Best radiation hardness for 93 eV photon is obtained by using a 4 nm titanium layer. Only a slight decrease in response can be seen in the p in n-substrate LPSD. The best radiation hardness is achieved by using the n in p-substrate LPSD, which show no significant decrease in response. Scanning after irradiation with 93 eV gives only a variation in response of 0.26% in the surrounding area of exposure. No decrease in response can be detected during the scan. Test with a 108 eV photon beam gives an increased variation in response of 0.7%, caused by the shallower absorption in Si.
Place, publisher, year, edition, pages
2018. Vol. 13, article id C12015
Keywords [en]
Materials for solid-state detectors, Photon detectors for UV, visible and IR photons (vacuum), Radiation-hard detectors
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-35398DOI: 10.1088/1748-0221/13/12/C12015ISI: 000453207800002Scopus ID: 2-s2.0-85059896139OAI: oai:DiVA.org:miun-35398DiVA, id: diva2:1276526
Conference
20th International Workshop on Radiation Imaging Detectors, Sundsvall, SWEDEN, JUN 24-28, 2018
2019-01-082019-01-082024-07-04Bibliographically approved