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Investigation of radiation hardness in lateral position sensitive detector, irradiated with 13.5 nm photons
Mid Sweden University, Faculty of Science, Technology and Media, Department of Electronics Design.
Sitek Electro Opt, Partille.
Elettra Sincrotone Trieste SCpA, Trieste, Italy.
Uppsala Univ, Uppsala.
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2018 (English)In: Journal of Instrumentation, ISSN 1748-0221, E-ISSN 1748-0221, Vol. 13, article id C12015Article in journal (Refereed) Published
Abstract [en]

Radiation hardness measurements have been done by irradiating lateral position sensitive (Si) detectors (LPSD) with 93 eV photons. Three different passivation layers have been investigated, SiO2, oxynitride and deposited 4 nm titanium-layer, on p in n-substrate LPSD and deposited 4 nm titanium layer on n in p-substrate LPSD. Best radiation hardness for 93 eV photon is obtained by using a 4 nm titanium layer. Only a slight decrease in response can be seen in the p in n-substrate LPSD. The best radiation hardness is achieved by using the n in p-substrate LPSD, which show no significant decrease in response. Scanning after irradiation with 93 eV gives only a variation in response of 0.26% in the surrounding area of exposure. No decrease in response can be detected during the scan. Test with a 108 eV photon beam gives an increased variation in response of 0.7%, caused by the shallower absorption in Si.

Place, publisher, year, edition, pages
2018. Vol. 13, article id C12015
Keywords [en]
Materials for solid-state detectors, Photon detectors for UV, visible and IR photons (vacuum), Radiation-hard detectors
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-35398DOI: 10.1088/1748-0221/13/12/C12015ISI: 000453207800002Scopus ID: 2-s2.0-85059896139OAI: oai:DiVA.org:miun-35398DiVA, id: diva2:1276526
Conference
20th International Workshop on Radiation Imaging Detectors, Sundsvall, SWEDEN, JUN 24-28, 2018
Available from: 2019-01-08 Created: 2019-01-08 Last updated: 2019-03-15Bibliographically approved

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Thungström, GöranFröjdh, Christer

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