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Plasma CVD of hydrogenated boron-carbon thin films from triethylboron
Linköping university; European Spallation Source ERIC, Lund.
Linköping university; European Spallation Source ERIC, Lund.
Linköping university; European Spallation Source ERIC, Lund; IHI Ionbond AG, Olten, Switzerland.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Electronics Design. European Spallation Source ERIC, Lund.ORCID iD: 0000-0003-3221-2086
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2018 (English)In: Journal of Chemical Physics, ISSN 0021-9606, E-ISSN 1089-7690, Vol. 148, no 3, article id 034701Article in journal (Refereed) Published
Abstract [en]

Low-temperature chemical vapor deposition (CVD) of B - C thin films is of importance for neutron voltaics and semiconductor technology. The highly reactive trialkylboranes, with alkyl groups of 1-4 carbon atoms, are a class of precursors that have been less explored for low-temperature CVD of B - C films. Herein, we demonstrate plasma CVD of B - C thin films using triethylboron (TEB) as a single source precursor in an Ar plasma. We show that the film density and B/C ratio increases with increasing plasma power, reaching a density of 2.20 g/cm3 and B/C = 1.7. This is attributed to a more intense energetic bombardment during deposition and more complete dissociation of the TEB molecule in the plasma at higher plasma power. The hydrogen content in the films ranges between 14 and 20 at. %. Optical emission spectroscopy of the plasma shows that BH, CH, C2, and H are the optically active plasma species from TEB. We suggest a plasma chemical model based on β-hydrogen elimination of C2H4 to form BH3, in which BH3 and C2H4 are then dehydrogenated to form BH and C2H2. Furthermore, C2H2 decomposes in the plasma to produce C2 and CH, which together with BH and possibly BH3-x(C2H5)x are the film forming species. 

Place, publisher, year, edition, pages
2018. Vol. 148, no 3, article id 034701
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Chemical Sciences
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URN: urn:nbn:se:miun:diva-32768DOI: 10.1063/1.5006886ISI: 000423029200017Scopus ID: 2-s2.0-85040715537OAI: oai:DiVA.org:miun-32768DiVA: diva2:1178670
Available from: 2018-01-30 Created: 2018-01-30 Last updated: 2018-02-22Bibliographically approved

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Hall-Wilton, Richard

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