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Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Deposition
Linköping Univ, Dept Phys Chem & Biol, Linköping; European Spallat Source ERIC, Lund.
Linköping Univ, Dept Phys Chem & Biol, Linköping.
Philipps Univ Marburg, Fachbereich Chem & Mat Sci Ctr, Marburg, Germany.
Philipps Univ Marburg, Fachbereich Chem & Mat Sci Ctr, Marburg, Germany.
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2017 (English)In: The Journal of Physical Chemistry C, ISSN 1932-7447, E-ISSN 1932-7455, Vol. 121, no 47, p. 26465-26471Article in journal (Refereed) Published
Abstract [en]

Alkylboranes, such as trimethylboron (TMB) and triethylboron (TEB), are promising alternative precursors in low temperature chemical vapor deposition (CVD) of boron-containing thin films. In this study, CVD growth of B-C films using TMB and quantum-chemical calculations to elucidate a gas phase chemical mechanism were undertaken. Dense, amorphous, boron-rich (B/C 1.5-3) films were deposited at 1000 degrees C in both dihydrogen and argon ambients, while films with crystalline B4C and B25C inclusions were deposited at 1100 degrees C in dihydrogen. A script-based automatization scheme was implemented for the quantum-chemical computations to enable time efficient screening of thousands of possible gas phase CVD reactions. The quantum-chemical calculations suggest TMB is mainly decomposed by an unimolecular alpha-H elimination of methane, which is complemented by dihydrogen-assisted elimination of methane in dihydrogen.

Place, publisher, year, edition, pages
2017. Vol. 121, no 47, p. 26465-26471
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:miun:diva-32568DOI: 10.1021/acs.jpcc.7b09538ISI: 000417228500037Scopus ID: 2-s2.0-85037140250OAI: oai:DiVA.org:miun-32568DiVA, id: diva2:1168629
Available from: 2017-12-21 Created: 2017-12-21 Last updated: 2018-01-19Bibliographically approved

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Hall-Wilton, Richard

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