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Analysis and improvement of the position nonlinearity caused by a residual stress in MOS-type position-sensitive detectors with indium tin oxide gate contact
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
CTRR, AB Sandvik Coromant.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media. (Electronics design division)
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
2008 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, Vol. 23, no 7, 1-10 p.Article in journal (Refereed) Published
Abstract [en]

In this paper, lateral effect position-sensitive detectors based on the MOS principle have been fabricated in lengths of 15 mm, 45 mm and 60 mm. The gate contact covering the active area consists of indium tin oxide which is a degenerate semiconductor transparent in the visible spectral range. Characterization and analysis have both been performed especially withparticular focus on the nonlinearity believed to be caused by stray stress induced in the inversion channel originating in the indium tin oxide gate contact. Stress in the channel will change the resistance in a non-uniform manner because of the piezoresistance effect, thus causing a nonlinearity in the position determination. It has been shown that the heat treatmentgreatly influences the linearity of the position-sensitive detectors. A heat treatment performed correctly results in 60 mm and 15 mm detectors with nonlinearity within ±0.1% and 45 mm detectors with nonlinearity within ±0.15% over 60% of the active length. This is an improvement over the previous results with this type of MOS position-sensitive detector. By performing a correctly timed heat treatment this PSD type has the potential to be used incommon position-sensing applications.

Place, publisher, year, edition, pages
IOP Publishing , 2008. Vol. 23, no 7, 1-10 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-6970DOI: 10.1088/0268-1242/23/7/075012ISI: 000257201100013Scopus ID: 2-s2.0-47749088257OAI: oai:DiVA.org:miun-6970DiVA: diva2:114274
Projects
STC - Sensible Things that Communicate
Available from: 2008-12-10 Created: 2008-11-11 Last updated: 2016-10-05Bibliographically approved

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Publisher's full textScopushttp://www.iop.org/EJ/abstract/0268-1242/23/7/075012

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CiteExportLink to record
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Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
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Language
  • de-DE
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More languages
Output format
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