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Silicon fusion bond interfaces resilient to wet anisotropic etchants
Uppsala universitet, Institutionen för materialvetenskap.
Uppsala universitet, Institutionen för materialvetenskap.
Uppsala universitet, Institutionen för materialvetenskap.
Uppsala universitet, Institutionen för materialvetenskap.ORCID iD: 0000-0003-2352-9006
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2001 (English)In: Journal of Micromechanics and Microengineering, ISSN 0960-1317, E-ISSN 1361-6439, Vol. 11, p. 359-363Article in journal (Refereed) Published
Abstract [en]

The bond interface in silicon microsystems is sensitive to the subjection to wet anisotropic etchants. Fusion bond interfaces of bonded wafers resilient to potassium hydroxide or tetramethyl ammonium hydroxide etching are obtained using wafers of oxidized silicon bonded to oxidized silicon, where the bond oxide is removed by trifluoromethane plasma etching. Other investigated bond configurations initiate severe damages during etching.

Place, publisher, year, edition, pages
2001. Vol. 11, p. 359-363
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Other Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:miun:diva-31595DOI: 10.1088/0960-1317/11/4/313OAI: oai:DiVA.org:miun-31595DiVA, id: diva2:1140949
Available from: 2007-02-27 Created: 2017-09-13 Last updated: 2017-09-13Bibliographically approved

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Hedlund, Christer

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