miun.sePublikasjoner
Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Probing Defects in a Small Pixellated CdTe Sensor Using an Inclined Mono Energetic X-Ray Micro Beam
Mittuniversitetet, Fakulteten för naturvetenskap, teknik och medier, Avdelningen för elektronikkonstruktion. CERN, CH-1211, Geneva, 23, Switzerland .
Mittuniversitetet, Fakulteten för naturvetenskap, teknik och medier, Avdelningen för elektronikkonstruktion.ORCID-id: 0000-0002-8325-5177
Diamond Light Source, Harwell Science and Innovation Campus, Chiltern, Didcot, Oxfordshire, OX11 0QX, United Kingdom .
Mittuniversitetet, Fakulteten för naturvetenskap, teknik och medier, Avdelningen för elektronikkonstruktion.ORCID-id: 0000-0002-5619-409X
Vise andre og tillknytning
2013 (engelsk)Inngår i: IEEE Transactions on Nuclear Science, ISSN 0018-9499, E-ISSN 1558-1578, Vol. 60, nr 4, s. 2864-2869Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

High quantum efficiency is important in X-ray imaging applications. This means using high-Z sensor materials. Unfortunately many of these materials suffer from defects that cause non-ideal charge transport. In order to increase the understanding of these defects, we have mapped the 3D response of a number of defects in two 1 mm thick CdTe sensors with different pixel sizes (55 mu m and 110 mu m) using a monoenergetic microbeam at 79 keV. The sensors were bump bonded to Timepix read out chips. Data was collected in photon counting as well as time-over-thresholdmode. The time-over-thresholdmode is a very powerful tool to investigate charge transport properties and fluorescence in pixellated detectors since the signal from the charge that each photon deposits in each pixel can be analyzed. Results show distorted electrical field around the defects, indications of excess leakage current and large differences in behavior between electron collection and hole collection mode. The experiments were carried out on the Extreme Conditions Beamline I15 at Diamond Light Source.

sted, utgiver, år, opplag, sider
2013. Vol. 60, nr 4, s. 2864-2869
Emneord [en]
CdTe, CdTe characterization, CdTe detectors, charge collection, charge sharing, charge trapping, defect characterization, defects, detectors, photon counting, radiation detectors, X-ray detectors, X-rays
HSV kategori
Identifikatorer
URN: urn:nbn:se:miun:diva-19922DOI: 10.1109/TNS.2013.2257851ISI: 000323451800006Scopus ID: 2-s2.0-84882896824Lokal ID: STCOAI: oai:DiVA.org:miun-19922DiVA, id: diva2:655221
Tilgjengelig fra: 2013-10-10 Laget: 2013-09-25 Sist oppdatert: 2017-12-06bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekstScopus

Personposter BETA

Fröjdh, ErikFröjdh, ChristerKrapohl, DavidNorlin, BörjeThungström, Göran

Søk i DiVA

Av forfatter/redaktør
Fröjdh, ErikFröjdh, ChristerKrapohl, DavidNorlin, BörjeThungström, Göran
Av organisasjonen
I samme tidsskrift
IEEE Transactions on Nuclear Science

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 720 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf