Open this publication in new window or tab >>2011 (English)In: Journal of Instrumentation, E-ISSN 1748-0221, Vol. 6, no 12, p. Art. no. C12019-Article in journal (Refereed) Published
Abstract [en]
Surface states and interface recombination velocity that exist between detector interfaces have always been known to affect the performance of a detector. This article describes how the detector performance varies when the doping profile is altered. When irradiated with electrons, the results show that while changes in the doping profile have an effect of the detector responsivity with respect to the interface recombination velocity
Vs, there is no visible effect with respect tofixed oxide charge
Qfotherwise known as interface fixed charge density.
Keywords
Interaction of radiation with matter; Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission
National Category
Nano Technology
Identifiers
urn:nbn:se:miun:diva-15251 (URN)10.1088/1748-0221/6/12/C12019 (DOI)000299536600019 ()2-s2.0-84855426427 (Scopus ID)STC (Local ID)STC (Archive number)STC (OAI)
Conference
13th INTERNATIONAL WORKSHOP ON RADIATION IMAGING DETECTORS, 3–7 JULY 2011, ETH ZURICH, SWITZERLAND
Note
13th INTERNATIONAL WORKSHOP ON RADIATION IMAGING DETECTORS, 3–7 JULY 2011, ETH ZURICH, SWITZERLAND
2011-12-142011-12-142024-07-04Bibliographically approved