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Deep levels due to vacancy pairs in silicon
1989 (English)In: International Journal of Modern Physics B, ISSN 0217-9792, Vol. 3, no 6, p. 863-870Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1989. Vol. 3, no 6, p. 863-870
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Natural Sciences
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URN: urn:nbn:se:miun:diva-3285Local ID: 3663OAI: oai:DiVA.org:miun-3285DiVA, id: diva2:28317
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2017-12-12Bibliographically approved

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Lindefelt, Ulf

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