Vertical Sandwich Gate-All-Around Field-Effect Transistors with Self-Aligned High-k Metal Gates and Small Effective-Gate-Length VariationShow others and affiliations
2020 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 41, no 1, p. 8-11, article id 8908797Article in journal (Refereed) Published
Abstract [en]
A new type of vertical nanowire (NW)/nanosheet (NS) field-effect transistors (FETs), termed vertical sandwich gate-all-around (GAA) FETs (VSAFETs), is presented in this work. Moreover, an integration flow that is compatible with processes used in the mainstream industry is proposed for the VSAFETs. Si/SiGe epitaxy, isotropic quasi-atomic-layer etching (qALE), and gate replacement were used to fabricate pVSAFETs for the first time. Vertical GAA FETs with self-aligned high-k metal gates and a small effective-gate-length variation were obtained. Isotropic qALE, including Si-selective etching of SiGe, was developed to control the diameter/thickness of the NW/NS channels. NWs with a diameter of 10 nm and NSs with a thickness of 20 nm were successfully fabricated, and good device characteristics were obtained. Finally, the device performance was investigated and is discussed in this work. © 2019 IEEE.
Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers Inc. , 2020. Vol. 41, no 1, p. 8-11, article id 8908797
Keywords [en]
atomic layer etching (ALE), gate-all-around (GAA), Si cap, SiGe channel, Vertical nanowire, Etching, Gates (transistor), Nanowires, Atomic layer etching, Device characteristics, Effective gate length, Field effect transistor (FETs), Gate-all-around, HIGH-K metal gates, SiGe channels, Vertical nanowires, Si-Ge alloys
Identifiers
URN: urn:nbn:se:miun:diva-41547DOI: 10.1109/LED.2019.2954537Scopus ID: 2-s2.0-85077768163OAI: oai:DiVA.org:miun-41547DiVA, id: diva2:1536242
2021-03-102021-03-102021-04-29Bibliographically approved